A new scheme for measuring itinerant spin polarizations |
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Authors: | DR Scifres BA Huberman RM White RS Bauer |
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Institution: | Xerox Palo Alto Research Center, 3180 Porter Dr., Palo Alto, California 93404, U.S.A. |
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Abstract: | An optical method for the measurement of itinerant electron spin polarization is proposed. It is based on the idea that when an itinerant electron is injected into a p-type semiconductor with a valence band spin orbit splitting ? kT, the polarization of the resulting recombination radiation is characteristic of the spin polarization. The feasibility and advantages of this technique are discussed. |
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