On the g factor for electrons in n-type silicon surface inversion layers

Self-consistent calculations for energy levels are performed for n-type inversion layers of silicon with magnetic field perpendicular to the (100) surface. ‘Apparent’ g factor g¹, obtained from the period of oscillation of states density at Fermi level for varying magnetic field, is plotted as a function of the $\text{Γ}\text{2βH}$, where Γ is the width of Landau levels. The results show that $\text{g}{}^1\text{～ g}\text{for Γ ? 2β}\text{H,}\text{and}\text{g}{}^1\text{～}\text{5 for Γ < 2β}\text{H}$. This means that we should be very careful when interpret the g shift of electrons in inversion layers for small surface electron density.