Surface photovoltage spectroscopy and surface piezoelectric effect in GaAs

“Real” (111) surfaces of n-type GaAs were investigated employing surface photovoltage spectroscopy and the surface piezoelectric effect. Surface states at the energy position E_c ? E_t ? 0.72 eV were found on both the Ga and the As surfaces. Both types of surfaces exhibited a barrier of about 0.55 V. No variations in the surface barrier or the energy position of the surface states were observed in various ambients at atmospheric pressure (dry air, wet air, ammonia and ozone). However, the capture cross-section of the surface states for electrons, as determined from the surface piezoelectric effect transients (of the order of 10^?13 cm²), was found to be sensitive to the ambient. It decreased in wet air and increased in ozone. This effect was more pronounced on the As than on the Ga surfaces. Additional surface states were found to be present in the energy region of 0.9 to 1.0 eV, below the bottom of the conduction band. However, their exact energy positions could not be determined due to interference caused by the carrier trapping of the surface states at E_c ? E_t ? 0.72 eV.