High pressure effect on the electrical properties of NiS2

A semiconductor-metal transition in the electrical resistance of NiS₂, which has been suggested to be a Mott transition, is observed with decreasing temperature under pressure up to 44 kbar. The transition temperature increases with pressure with a slope of $\text{dT}\text{dP}\text{= 6 ± 1 K/kbar}$. The activation energy in a semiconducting region is found to decrease with increasing pressure and to vanish at about 46 kbar. The critical pressure and temperature are predicted to be 46 ± 2 kbar and 350 ± 20 K.