Validity of the Fowler-Nordheim parameters measured for silicon adsorption on single crystal faces of tungsten

The adsorption of silicon on the (112), (111), (100), (110), (113) and (116) planes of tungsten field emitters has been studied. As with Ge and CdS adsorption, anomalous behaviour of the Fowler-Nordheim parameters A and φ was observed together with non-linearity in the Fowler-Nordheim plots. This non-linearity is not explicable in terms of the theories proposed for bulk semiconductors. The present results support the suggestion that field-induced Si migration from the W substrate is responsible for anomalies in the F-N parameters.