Shubnikov-de Haas effects in Bi2Se3 with high carrier concentrations |
| |
| Authors: | GR Hyde RO Dillon HA Beale IL Spain JA Woollam David J Sellmyer |
| |
| Institution: | Laboratory for High Pressure Science, Department of Chemical Engineering, University of Maryland, College Park, Maryland 20742, U.S.A.;NASA, Lewis Research Center, Cleveland, Ohio 44135, U.S.A.;Materials Science Center, M.I.T., Cambridge, Massachusetts 02139, U.S.A. |
| |
| Abstract: | Shubnikov-de Haas frequencies were measured in highly degenerate n-type Bi2Se3 having a higher carrier density (～9 × 1025m-3) than previously reported. The Fermi surface was found to be elongated along the trigonal axis, fitting a spheroidal model with an axial ratio of 5.0 for angles up to θ = 45°. Comparison of the number of carriers obtained from Hall measurements with that obtained from the Shubnikov-de Haas measurement supports the contention that the lowest conduction band minimum is a single surface located in the center of the Brillouin zone. The higher effective mass (0.25 m0) found for these carrier concentrations indicates that the band is non-parabolic. |
| |
| Keywords: | |
| 本文献已被 ScienceDirect 等数据库收录！ |
|
