Indirect exciton transitions in the two-photon absorption in semiconductors |
| |
Authors: | A.R. Hassan |
| |
Affiliation: | International Centre for Theoretical Physics, Trieste, Italy |
| |
Abstract: | The theory of indirect two-photon exciton transitions is developed from third-order time-dependent perturbation theory. The problem is treated by introducing three different band models; a four-band, a two-band and an intermediate (three-band) model. Selection rules and numerical estimates show that the three-band model is the most favourable for this type of process. An application for the case of GaP is performed. |
| |
Keywords: | |
本文献已被 ScienceDirect 等数据库收录! |
|