Reflectance modulation in HgTe |
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Authors: | A Moritani C Hamaguchi J Nakai |
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Institution: | Department of Electronics, Osaka University, Suita, Osaka, Japan |
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Abstract: | Three kinds of modulation techniques, electroreflectance, thermoreflectance and piezo-reflectance are employed to determine energy band parameters in HgTe in the range of photon energy 0.5 to 4 eV. The value of the spin-orbit splitting Δ0 is determined to be 1.08 ± 0.02 eV from the measurement of electroreflectance with the use of the electrolyte technique and is assigned with the help of electroreflectance measurement on CdxHg1?xTe alloys. In thermoreflectance and piezoreflectance near E1, various information is obtained, such as broadening parameters, the energy gaps, the location of the transition edge and the ratios of deformation potential constants D15/D11 = ? 1.4 ± 0.5 and D35/D33= 2.3 ± 0.8 at room temperature. |
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