Landau transitions at higher gaps in InSb and GaSb |
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Authors: | SO Sari |
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Institution: | Department of Physics and Center for Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Mass. 02139, U.S.A. |
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Abstract: | Landau levels have been resolved at the E1 + Δ1 gap in InSb and at the E1 edge in GaSb. Transverse reduced masses of 19 ± 3 and 21.4 ± 1.5 have been obtained at the respective edges. Using band gaps determined from the experiment, the spin-orbit splitting Δ1 has been measured as 0.500 ± 0.013 eV in InSb. Combined with a measurement of the zone center spin-orbit splitting, this gives a ratio of 0.623 ± 0.02 of slightly less than . |
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