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Interface analysis of the system Si/YBa2Cu3O7?x |
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| Authors: | C Ziegler F Baudenbacher H Karl H Kinder and W Göpel |
| Institution: | (1) Institut für Physikalische und Theoretische Chemie, Universität Tübingen, Auf der Morgenstelle 8, W-7400 Tübingen, Federal Republic of Germany;(2) Physik Department, TU München, James-Frank-Strasse 1, W-8046 Garching, Federal Republic of Germany |
| Abstract: | Summary The influence of different preparation conditions and substrate surface orientations on the superconducting properties of thin YBa2Cu3O7–x (YBCO) films on silicon was studied. Comparative electrical and surface spectroscopic measurements were performed. SAM and SIMS depth profile analysis show an enrichment of barium at the interface between the superconductor and silicon for samples with Tc<76 K. Comparison with XPS data obtained for thin silicon films on YBCO indicates the formation of barium and yttrium silicates at the interface under these conditions. |
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