High‐Quality Three‐Dimensional Nanoporous Graphene |
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| Authors: | Dr. Yoshikazu Ito Dr. Yoichi Tanabe Dr. H.‐J. Qiu Dr. Katsuaki Sugawara Dr. Satoshi Heguri Dr. Ngoc Han Tu Dr. Khuong Kim Huynh Dr. Takeshi Fujita Prof. Takashi Takahashi Prof. Katsumi Tanigaki Prof. Mingwei Chen |
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| Affiliation: | 1. WPI Advanced Institute for Materials Research, Tohoku University, Sendai 980‐8577 (Japan) http://www.wpi‐aimr.tohoku.ac.jp/chen_labo/;2. Department of Physics, Graduate School of Science, Tohoku University, Sendai, 980‐8578 (Japan);3. State Key Laboratory of Metal Matrix Composites, School of Materials Science and Engineering, Shanghai Jiao Tong University, Shanghai 200030 (China);4. CREST (Japan) Science and Technology Agency, Saitama 332‐0012 (Japan) |
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| Abstract: | We report three‐dimensional (3D) nanoporous graphene with preserved 2D electronic properties, tunable pore sizes, and high electron mobility for electronic applications. The complex 3D network comprised of interconnected graphene retains a 2D coherent electron system of massless Dirac fermions. The transport properties of the nanoporous graphene show a semiconducting behavior and strong pore‐size dependence, together with unique angular independence. The free‐standing, large‐scale nanoporous graphene with 2D electronic properties and high electron mobility holds great promise for practical applications in 3D electronic devices. |
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| Keywords: | chemical vapor deposition graphene magnetoresistance massless Dirac fermions nanoporous materials |
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