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Core-level shifts of the c(8 × 2)-reconstructed InAs(1 0 0) and InSb(1 0 0) surfaces
Authors:P Laukkanen  MPJ Punkkinen  M Ahola-Tuomi  J Lång  K Schulte  A Pietzsch  M Kuzmin  J Sadowski  J Adell  RE Perälä  M Ropo  K Kokko  L Vitos  B Johansson  M Pessa  IJ Väyrynen
Institution:1. Department of Physics and Astronomy, University of Turku, FI-20014 Turku, Finland;2. Optoelectronics Research Centre, Tampere University of Technology, FI-33101 Tampere, Finland;3. Applied Materials Physics, Department of Materials Science and Engineering, Royal Institute of Technology, SE-10044 Stockholm, Sweden;4. MAX-lab, Lund University, SE-221 00 Lund, Sweden;5. A. F. Ioffe Physico-Technical Institute, Russian Academy of Sciences, St. Petersburg 194021, Russian Federation;6. Institute of Physics, Polish Academy of Sciences, al. Lotnikow 32/46, 02-668 Warszawa, Poland;g Department of Applied Physics, Chalmers University of Technology, SE-41296 Göteborg, Sweden;h Department of Information Technology, Åbo Akademi University, FI-20500 Turku, Finland;i Division for Materials Theory, Department of Physics and Materials Science, Uppsala University, SE-75121 Uppsala, Sweden;j Research Institute for Solid State Physics and Optics, P.O. Box 49, H-1525 Budapest, Hungary;k School of Physics and Optoelectronic Technology & College of Advanced Science and Technology, Dalian University of Technology, Dalian 116024, China
Abstract:We have studied In-stabilized c(8 × 2)-reconstructed InAs(1 0 0) and InSb(1 0 0) semiconductor surfaces, which play a key role in growing improved III–V interfaces for electronics devices, by core-level photoelectron spectroscopy and first-principles calculations. The calculated surface core-level shifts (SCLSs) for the ζ and ζa models, which have been previously established to describe the atomic structures of the III–V(1 0 0)c(8 × 2) surfaces, yield hitherto not reported interpretation for the As 3d, In 4d, and Sb 4d core-level spectra of the III–V(1 0 0)c(8 × 2) surfaces, concerning the number and origins of SCLSs. The fitting analysis of the measured spectra with the calculated ζ and ζa SCLS values shows that the InSb spectra are reproduced by the ζ SCLSs better than by the ζa SCLSs. Interestingly, the ζa fits agree better with the InAs spectra than the ζ fits do, indicating that the ζa model describes the InAs surface better than the InSb surface. These results are in agreement with previous X-ray diffraction data. Furthermore, an introduction of the complete-screening model, which includes both the initial and final state effects, does not improve the fitting of the InSb spectra, proposing the suitability of the initial-state model for the SCLSs of the III–V(1 0 0)c(8 × 2) surfaces. The found SCLSs are discussed with the ab initio on-site charges.
Keywords:Surface core-level shift (SCLS)  Synchrotron radiation photoelectron spectroscopy  Ab initio calculations  Surface reconstruction  Indium arsenide (InAs)  Indium antimonide (InSb)
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