The contribution of surface effects to the surface photovoltage dependence on temperature for the real Si(111) surface

The dependences of the surface photovoltage and photoconductivity on temperature (in the range of 300–430 K) for the real p- and n-type Si(111) surface have been measured. The results of the experiments have shown the strong influence of the surface treatment (etching in HF solution or baking in vacuum) on the temperature dependences of the surface photovoltage and photoconductivity. Good qualitative agreement has been obtained between experimental and theoretical plots of the surface photovoltage as a function of temperature calculated on the basis of the Lile theory.