首页 | 本学科首页   官方微博 | 高级检索  
     

The effect of electronic orbital interactions on p-type doping tendency in ZnO series: First-principles calculations
引用本文:张芳英,游建强,曾 雉,钟国华. The effect of electronic orbital interactions on p-type doping tendency in ZnO series: First-principles calculations[J]. 中国物理, 2007, 16(12): 3815-3819. DOI: 10.1088/1009-1963/16/12/043
作者姓名:张芳英  游建强  曾 雉  钟国华
作者单位:(1)Key Laboratory of Materials Physics, Institute of SolidState Physics, Chinese Academy of Sciences, Hefei 230031}, China; (2)Surface Physics Laboratory (National Key) and Physics Department,Fudan University, Shanghai 200433, China
基金项目:Project supported by the National Natural ScienceFoundation of China (Grant No~10625416).
摘    要:The electronic structures and optical properties of B3 ZnO series ofZnelectronic structures, optical properties, pseudopotential plane-wave method, hspace*{1.9cm} p-type doping tendency,electronic structures, optical properties, pseudopotential plane-wave method, hspace*{1.9cm} p-type doping tendencyProject supported by the National Natural ScienceFoundation of China (Grant No~10625416).2007-04-252007-06-18The electronic structures and optical properties of B3 ZnO series of Zn4X4-yMy(X :O, S, Se or Te; M = N, Sb, C1 or I; y = 0 or 1) are studied by first-principles calculations using a pseudopotential plane-wave method. The results show that Zn d-X p orbital interactions play an important role in the p-type doping tendency in zinc-based Ⅱ-Ⅵ semiconductors. In ZnX, with increasing atomic number of X, Zn d-X p orbital interactions decrease and Zn s-X p orbital interactions increase. Additionally, substituting group-V elements for X will reduce the Zn d-X p orbital interactions while substituting group-VII elements for X will increase the Zn d-X p orbital interactions. The results also show that group-V-doped ZnX and group-Ⅷ-doped ZnX exhibit different optical behaviours due to their different orbital interaction effects.

关 键 词:electronic structures   optical properties   pseudopotential plane-wave method   hspace*{1.9cm} p-type doping tendency  
文章编号:1009-1963/2007/16(12)/3815-05
收稿时间:2007-04-25
修稿时间:2007-06-18

The effect of electronic orbital interactions on p-type doping tendency in ZnO series: First-principles calculations
Zhang Fang-Ying,You Jian-Qiang,Zeng Zhi and Zhong Guo-Hua. The effect of electronic orbital interactions on p-type doping tendency in ZnO series: First-principles calculations[J]. Chinese Physics, 2007, 16(12): 3815-3819. DOI: 10.1088/1009-1963/16/12/043
Authors:Zhang Fang-Ying  You Jian-Qiang  Zeng Zhi  Zhong Guo-Hua
Affiliation:Surface Physics Laboratory (National Key) and Physics Department, Fudan University, Shanghai 200433, China; Key Laboratory of Materials Physics, Institute of Solid State Physics, Chinese Academy of Sciences, Hefei 230031, China
Abstract:The electronic structures and optical properties of B3 ZnO series ofZn$_{4}$$X_{4-y}M_{y}$($X=$O, S, Se or Te; $M=N$, Sb, Cl or I; $y=0$or 1) are studied by first-principles calculations using apseudopotential plane-wave method. The results show that Zn d-$X$ porbital interactions play an important role in the p-type dopingtendency in zinc-based II-VI semiconductors. In Zn$X$, withincreasing atomic number of $X$, Zn d-$X$ p orbital interactionsdecrease and Zn s-$X$ p orbital interactions increase. Additionally,substituting group-V elements for $X$ will reduce the Zn d-$X$ porbital interactions while substituting group-VII elements for $X$will increase the Zn d-$X$ p orbital interactions. The results alsoshow that group-V-doped Zn$X$ and group-VII-doped Zn$X$ exhibitdifferent optical behaviours due to their different orbitalinteraction effects.
Keywords:electronic structures   optical properties   pseudopotential plane-wave method   hspace*{1.9cm} p-type doping tendency
本文献已被 维普 等数据库收录!
点击此处可从《中国物理》浏览原始摘要信息
点击此处可从《中国物理》下载免费的PDF全文
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号