[PtIn6][GaO4]2 – das erste Oxid mit [PtIn6]‐Oktaedern. Darstellung,Charakterisierung und Rietveldverfeinerung – mit einer Bemerkung zur Mischkristallreihe [PtIn6][GaO4]2–x[InO4]x (0 < x ≤ 1)

[PtIn₆][GaO₄]₂ – The First Oxide Containing [PtIn₆] Octahedra. Preparation, Characterisation, and Rietveld Refinement – With a Remark to the Solid Solution Series [PtIn₆][GaO₄]_2‐x[InO₄]_x (0 < x ≤ 1) The novel oxides [PtIn₆][GaO₄]_2–x[InO₄]_x (0 < x ≤ 1) are formed by heating intimate mixtures of Pt, In, In₂O₃, and Ga₂O₃ in the corresponding stoichiometric ratio in corundum crucibles under an atmosphere of argon (1220 K, 70 h). The compounds are black, stable in air at room temperature, reveal a semiconducting behaviour, and decompose only in oxidizing acids. X‐ray powder diffraction patterns can be indexed by assuming a face centered cubic unit cell with lattice parameters ranging from a = 1001.3(1) pm (x = 0) to a = 1009.3(1) pm (x = 1). According to a Rietveld refinement [PtIn₆][GaO₄]₂ crystallizes isotypic to the mineral Pentlandite (Fm3m, Z = 4, R(profile) = 6.11%, R(intensity) = 3.95%). The characteristic building units are isolated [PtIn₆]¹⁰⁺ octahedra which are linked via [GaO₄]^5– tetrahedra to a three dimensional framework. Starting from [PtIn₆][GaO₄]₂ the substitution of Ga³⁺ ions by larger In³⁺ ions leads to the formation of a solid solution series according to the general formula [PtIn₆][GaO₄]_2–x[InO₄]_x and becomes apparent in an increase of the lattice parameter.