Effect of oxidizing environments on the diffusion-segregation boron distribution in the thermal silicon dioxide-silicon system

The diffusion-segregation boron distribution in the silicon dioxide-silicon system upon oxidation in different environments is studied by secondary-ion mass spectrometry and numerical simulation. The coefficient of boron segregation at the SiO₂/Si interface and the enhancement of boron diffusion in silicon as functions of the type of oxidizing environment (dry oxygen, wet oxygen, and the presence of hydrochloric acid vapor), the orientation of the silicon surface, and the temperature of oxidizing annealing are obtained. A qualitative model is proposed based on the assumption that the segregation mass transfer of boron through the SiO₂/Si interface is associated with the generation of nonequilibrium intrinsic interstitials.