Growth of InAs1–ySby solid solutions for obtaining decreased lattice mismatch in the InAs-GaSb (AlxGa1–nSb) system

This paper presents the results of investigation of the technological conditions of LPE growth of InAs_1–ySb_y solid solutions on InAs substrates. It is shown that the chosen regions of composition of InAs_1–ySb_y solid solutions and experimentally determined technological conditions allow the obtaining of InAs_1–ySb_y solid solutions with lattice parameter values close to those of the Al_xGa_1–xSb (0 ≦ x ≦ 0.2) solid solutions.