Surface and bulk valence band photoemission of silicon carbide |
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| Affiliation: | 1. University of California, Department of Mechanical Engineering, 6141 Etcheverry Hall, Berkeley, CA 94720, USA;2. Lawrence Berkeley National Laboratory, 1 Cyclotron Rd, Berkeley, CA 94720, USA;3. City University of Hong Kong, Department of Physics and Materials Science, 83 Tat Chee Avenue, Kowloon, Hong Kong Special Administrative Region;4. Bio-Logic USA, 9050 Executive Park Dr NW, Knoxville, TN 37923, USA |
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| Abstract: | ![]()
Surface and bulk valence band photoemission spectra have been obtained for silicon carbide using Zr M-zeta (151.4eV) and Mg Kα1,2 (1253.6eV) excitation, respectively. The data have been corrected for various broadening effects using a deconvolution procedure. Spectra for single-crystal hexagonal α-SiC and for epitaxial films of cubic β-SiC on Si (1 0 0) are compared with the results of band structure calculations. Differences in the spectra for various surface reconstructions suggest the existence of surface resonances, but no surface states are observed in the bulk optical bandgap. |
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