Defects in implanted and Czochralski silicon

Rod-like defects, a6〈114〉 and a/3〈111〉 faults, and a/2〈110〉 loops may all be generated by self-interstitial aggregation during the annealing of implanted or Czochralski silicon, and several models, intended to account for one or more of these, are compared. It is concluded that the rod-like defects are {113} faults, and that the three faulted defects form independently (i.e. they are not related in an „evolutionary”︁ sequence). The dipolelike a/2〈110〉 loops probably result from the unfaulting of {113} faults, while other perfect loops are generated by the shear of a/6〈114〉 defects. At a given temperature, the latter appear considerably more likely to unfault than the a3〈111〉 faults. The structure of the {113} fault remains uncertain.