On the nonlinearity of the P(V) characteristics of heavily doped semiconductors

The interrelation between the hydrostatic pressure P and the relative change of volume V in heavily doped semiconductors with a band structure containing several non-equivalent minima (A^IIIB^V type) is considered.It is shown that under the electron transition from a low central minimum into “heavy” subsidiary minima the P(V) dependence becomes superlinear.The possibility of the appearance in this case of a spontaneous deformation with a significant electron redistribution between the central and the subsidiary minima is treated.