Oxidation of silicon: New electron spectroscopy results |
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| Authors: | J.E. Rowe G. Margaritondo H. Ibach H. Froitzheim |
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| Affiliation: | Bell Laboratories, Murray Hill, NJ 07974, U.S.A.;Institut für Grenzflächenforschung and Vacuumphysik, Kernforschungslage, Jülich, West Germany |
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| Abstract: | New X-ray photoemission spectroscopy data and high resolution electron scattering spectroscopy data are presented which indicate that a peroxide-like model of the oxygen chemisorption on silicon surface is correct. These results are discussed in light of a recent double-bonded oxygen atom model due to Ludeke and Koma. |
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