Ultrasonic attenuation due to resonant interaction with a distribution of level splittings of the ground state of shallow acceptors in Ge |
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Authors: | E Ortlieb Hp Schad K Lassmann |
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Institution: | Max-Planck-Institut für Festkörperforschung, Heilbronnerstrasse 69, 7000 Stuttgart 1, Deutschland, Germany |
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Abstract: | The ultrasonic attenuation in Ge (Ga, In) has been measured in the frequency range from 500 MHz to 2.5 GHz, and from room temperature down to 1 K. Below 10 K the attenuation rises as ω2/T. For the first time saturation of the attenuation has been observed for ground state of a shallow acceptor. These results can be interpreted as due to resonance interaction with level splittings of a broad distribution with width of about 0.1 meV. |
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