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Optical properties of the clean and slowly oxidized surface of silicon
Authors:P Chiaradia  S Nannarone
Affiliation:Istituto di Fisica, Università degli Studi di Roma, Rome, Italy;Istituto di Fisica, Università degli Studi di Camerino, Camerino, Italy
Abstract:
The optical absorption of an UHV cleaved (111) surface of Si has been investigated as a function of the exposure to oxygen. Data concerning the disappearing of surface states with oxidation are reported. The sticking coefficient for oxygen of a clean surface of Si is calculated from optical absorption data.
Keywords:
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