Characterization of photodiodes,made from a p-type epitaxial layer grown on n-type InSb <1 1 1> by LPE method |
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| Authors: | Gh Sareminia M Hajian H Simchi Sh Eminov M Moradi |
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| Institution: | 1. Semiconductor Component Industry (SCI), P.O. Box 19575–199, Tehran, Iran;2. Institute of Physics, Azerbaijan University, Azerbaijan;1. Faculty of Engineering, Kagawa University, 2217-20 Hayashi-cho, Takamatsu, Kagawa 761-0396, Japan;2. Teikoku Databank, Ltd., 2-5-20 Minami Aoyama, Minato-ku, Tokyo 107-8680, Japan;3. Institute for Solid State Physics, University of Tokyo, 5-1-5 Kashiwa, Chiba 277-8581, Japan;4. Faculty of Education, Kagawa University, 1-1 Saiwai-cho, Takamatsu, Kagawa 760-8521, Japan;1. Dipartimento di Scienze della Terra, Università degli Studi di Firenze, via La Pira 4, I-50121 Firenze, Italy;2. Department of Geology, University of the Free State, Bloemfontein 9300, South Africa;3. Department of Applied Geosciences and Geophysics, University of Leoben, Peter Tunner str. 5, A-8700 Leoben, Austria;1. Institute for Materials Research, Tohoku University, 2-1-1, Katahira, Aoba-ku, Sendai 980-8577, Japan;2. New Industry Creation Hatchery Center (NICHe), Tohoku University, 6-6-10, Aoba, Aramaki, Aoba-ku, Sendai 980-8579, Japan;1. Beijing Center for Crystal Research and Development, Key Lab of Functional Crystal and Laser Technology, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing 100190, China;2. University of Chinese Academy of Sciences, Beijing 100049, China;1. Department of Physics, Changwon National University, 641-773, Korea;2. Department of Physics, University of Texas Arlington, 76019, USA |
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| Abstract: | In this article the performance of photodiodes made from epitaxially grown layers of p-InSb on n-type InSb substrates is reported. The effect of increasing Cd atomic weight percent on p-type carrier concentration and mobility at 77 K is also discussed. In our epitaxial growth method, a ramp cooling technique was used. Finally by improving growth parameters such as growth temperature, prior cleaning of B face (Sb) n-InSb substrates and cooling rate, adequate epitaxial layers of p-InSb on n-InSb <1 1 1> and consequently highly sensitive photodiodes have been obtained.A high detectivity photodiodes fabricated for p-InSb on n-InSb substrate by liquid phase epitaxy (LPE) was measured using optoelectronic tests and the detectivity of the diodes was compared with n-InSb on p-InSb. Several other tests such as Hall effect, thickness measurements, I–V and X-ray diffraction (XRD) were also performed and morphology images will be presented in this paper. |
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