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Phonon-plasmon interaction in tunneling GaAs/AlAs superlattices |
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| Authors: | V. A. Volodin M. D. Efremov V. V. Preobrazhenskii B. R. Semyagin V. V. Bolotov V. A. Sachkov E. A. Galaktionov A. V. Kretinin |
| Affiliation: | (1) Institute of Semiconductor Physics, Siberian Division, Russian Academy of Sciences, pr. akademika Lavrent’eva 13, Novosibirsk, 630090, Russia;(2) Institute of Sensor Microelectronics, Siberian Division, Russian Academy of Sciences, Omsk, 644077, Russia;(3) Novosibirsk State University, ul. Pirogova 2, Novosibirsk, 630090, Russia |
| Abstract: | The phonon-plasmon interaction in tunneling GaAs n /AlAs m superlattices (m=5and 6≥n≥0.6 monolayers) was studied by Raman scattering spectroscopy. The interaction of optical phonons localized in GaAs and AlAs layers with quasi-three-dimensional plasmons strengthens as the thickness of GaAs quantum wells decreases and the electronic states in the superlattices become delocalized due to tunneling. It is assumed that the plasmons also interact with the TO-like phonon modes localized in quantum islands or in thin ruffled layers. |
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