Influence of barrier parameters on tunneling in ferromagnet-insulator-ferromagnet contacts

The contribution of electrons moving at large angles to the barrier junction plane to the tunnel current is calculated. This contribution turns out to be small only if the Fermi energy of the electrons equals several electron volts. Otherwise, specifically, when the Fermi energy is no higher than 1–2 eV, this contribution dominates in high and thin potential barriers. It is found that the tunnel magnetic resistance in ferromagnet-insulator-ferromagnet contacts correlates with this contribution. It is this correlation that is responsible for a decrease in this contribution as the potential barriers get lower and thicker.