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Material characteristics of metalorganic chemical vapor deposition of Bi2Te3 films on GaAs substrates |
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| Authors: | Yong-Chul Jung Jeong-Hun Kim Sang-Hee Suh Byeong-Kwon Ju Jin-Sang Kim |
| Affiliation: | aThin Film Materials Research Center, Korea Institute of Science and Technology, P.O. Box 131, Cheongryang, Seoul 130-650, South Korea bCenter for Nanostructured Materials Technology, KIST, 39-1 Hawolgokdong, Seongbukgu, Seoul, South Korea cDepartment of Electrical Engineering, Korea University, Seoul 136-791, South Korea |
| Abstract: | Metal organic chemical vapor deposition has been investigated for growth of Bi2Te3 films on (0 0 1) GaAs substrates using trimethylbismuth and diisopropyltelluride as metal organic sources. The results of surface morphology, electrical and thermoelectric properties as a function of growth parameters are given. The surface morphologies of Bi2Te3 films were strongly dependent on the deposition temperatures. Surface morphologies varied from step-flow growth mode to island coalescence structures depending on deposition temperature. In-plane carrier concentration and electrical Hall mobility were highly dependent on precursor's ratio of VI/V and deposition temperature. By optimizing growth parameters, we could clearly observe an electrically intrinsic region of the carrier concentration at the temperature higher than 240 K. The high Seebeck coefficient (of −160 μVK−1) and good surface morphology of this material is promising for Bi2Te3-based thermoelectric thin film and two-dimensional supperlattice device applications. |
| Keywords: | A3. Metalorganic chemical vapor deposition B1. Bismuth compounds B2. Thermoelectric materials |
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