Desorption kinetics and surface diffusion of potassium,rubidium and cesium on a silicon(111)7 × 7-surface

Using pulsed atomic beam technique and a surface ionization ion microscope, the desorption kinetics and the surface diffusion of the alkalis potassium, rubidium and cesium were investigated on a Si(111)7 × 7-surface at extremely low alkali coverages. In the temperature range 1120 … 800 K, the mean adsorption lifetime τ(T) = τ₀ · exp(E_desⁱ/kT) and the mean diffusion length x(T) - defined in the equilibrium between adsorption, diffusion and desorption - were measured. From these data the diffusion constant D(T) = D₀ · exp(-E_diff/kT) was obtained as D = x^?2/τ. For temperatures T ? 750 K, the diffusion constant was calculated from nonstationary alkali concentration profiles using the Boltzmann-Matano method. From the temperature dependence of these quantities the parameters of desorption (E_des,ⁱ τ₀) and surface diffusion (E_diff, D₀) for K, Rb and Cs on Si(111) were obtained. The values of E_diff and D₀ are comparably high and may be interpreted by non-localized diffusion according to a model proposed by Bonzel (Surf. Sci. 21 (1970) 45).