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Pico-second photoelectric characteristic in manganite oxide La0.67Ca0.33MnO3 films
作者姓名:赵昆  黄延红  吕惠宾  何萌  金奎娟  陈正豪  周岳亮  程波林  戴守愚  杨国桢
作者单位:Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080, China; International Centre for Materials Physics, Chinese Academy of Sciences, Shenyang 110016, China;Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080, China;Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080, China;Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080, China;Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080, China;Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080, China;Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080, China;Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080, China;Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080, China;Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080, China
基金项目:Project supported by the National Natural Science Foundation of China (Grant No 10334070).
摘    要:Ultrafast photoelectric characteristic has been observed in La0.67Ca0.33MnO3 films on tilted SrTiO3 substrates. A pico-second (ps) open-circuit photovoltage of the perovskite manganese oxide films has been obtained when the films were irradiated by a 1.064μm laser pulse of 25 ps duration. The rise time and full width at half-maximum of the photovoltage pulse are ~300 ps and ~700 ps, respectively. The photovoltaic sensitivity was as large as ~500 mV/mJ.

关 键 词:薄膜物理学  氧化锰  光电特征  激光脉冲  灵敏度
收稿时间:2004-10-26

Pico-second photoelectric characteristic in manganite oxide La0.67Ca0.33MnO3 films
Zhao Kun,Huang Yan-Hong,Lü Hui-Bin,He Meng,Jin Kui-Juan,Chen Zheng-Hao,Zhou Yue-Liang,Cheng Bo-Lin,Dai Shou-Yu,Yang Guo-Zhen.Pico-second photoelectric characteristic in manganite oxide La0.67Ca0.33MnO3 films[J].Chinese Physics B,2005,14(2):420-421.
Authors:Zhao Kun  Huang Yan-Hong  Lü Hui-Bin  He Meng  Jin Kui-Juan  Chen Zheng-Hao  Zhou Yue-Liang  Cheng Bo-Lin  Dai Shou-Yu  Yang Guo-Zhen
Institution:Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080, China; Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080, China; International Centre for Materials Physics, Chinese Academy of Sciences, Shenyang 110016, China
Abstract:Ultrafast photoelectric characteristic has been observed in La0.67Ca0.33MnO3 films on tilted SrTiO3 substrates. A pico-second (ps) open-circuit photovoltage of the perovskite manganese oxide films has been obtained when the films were irradiated by a 1.064μm laser pulse of 25 ps duration. The rise time and full width at half-maximum of the photovoltage pulse are ~300 ps and ~700 ps, respectively. The photovoltaic sensitivity was as large as ~500 mV/mJ.
Keywords:manganese oxide  thin film  photoelectric characteristic
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