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表面层对1 064 nm高反射镜损伤阈值影响
引用本文:鲁江涛,焦宏飞,程鑫彬,马彬,丁涛,张锦龙,沈正祥,周刚.表面层对1 064 nm高反射镜损伤阈值影响[J].强激光与粒子束,2011,23(4).
作者姓名:鲁江涛  焦宏飞  程鑫彬  马彬  丁涛  张锦龙  沈正祥  周刚
作者单位:1. 同济大学 精密光学工程技术研究所, 上海 200092; 2. 上海市特殊人工微结构材料与技术重点实验室,上海 200092;3. 同济大学 航空航天与力学学院, 上海 200092
基金项目:国家高技术发展计划项目,中国博士后科学基金,上海市博士后基金
摘    要: 采用电子束蒸发的方法制备了3种具有不同表面层材料及结构的中心波长为1 064 nm的零度高反镜,3种膜系表面层分别为1/4波长光学厚度的HfO2,1/2波长光学厚度的SiO2,以及1/4波长光学厚度的SiO2。光谱测试表明:三者在1 064 nm处均有较高的反射率(高于99.8%),利用热透镜的方法测量得到3个膜系辐照激光正入射情况下,薄膜对光的吸收比例分别为3.0×10-6,5.0×10-6和6.5×10-6,其损伤阈值分别为32.5,45.2和28.4 J/cm2。并在膜层内部电场分布和膜层材料物理特性的基础上分析了3种不同表面层膜系吸收和损伤阈值差别的原因。

关 键 词:表面层  激光损伤阈值  电场分布  薄膜吸收
收稿时间:1900-01-01;

Influence of outmost layer on laser induced damage threshold of 1064 nm high-reflection mirrors
Lu Jiangtao,Jiao Hongfei,Cheng Xinbin,Ma Bin,Ding Tao,Zhang Jinlong,Shen Zhengxiang,Zhou Gang.Influence of outmost layer on laser induced damage threshold of 1064 nm high-reflection mirrors[J].High Power Laser and Particle Beams,2011,23(4).
Authors:Lu Jiangtao  Jiao Hongfei  Cheng Xinbin  Ma Bin  Ding Tao  Zhang Jinlong  Shen Zhengxiang  Zhou Gang
Institution:1. Institute of Precision Optical Engineering, Tongji University, Shanghai 200092, China;2. Shanghai Key Laboratory of Special Artificial Microstructure Materials and Technology, Shanghai 200092, China;3. School of Aerospace Engineering and Applied Mechanics, Tongji University, Shanghai 200092, China
Abstract:Electron beam evaporation method was applied to deposit three sets of 1 064 nm laser mirrors with different outmost layers: quarter-wavelength HfO2, half-wavelength SiO2 and quarter wavelength SiO2 layers, respectively. High reflectivity (more than 99.8%) has been achieved for all the stacks, and irradiated at normal incidence photothermal measurements of absorption are 3.0×10-6, 5.0×10-6 and 6.5×10-6, respectively. Corresponding laser induced damage thresholds (LIDTs) are 32.5 J/cm2, 45.2 J/cm2 and 28.4 J/cm2. The relations of electric field distribution, absorption, layer material characters and LIDT are also discussed.
Keywords:laser-induced damage threshold  electric field distribution  film absorption
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