Effect of signal-modulated optical radiation on the characteristics of a Modfet |
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| Authors: | H. Mitra D. P. Singh B. B. Pal |
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| Affiliation: | (1) Department of Physics, Banaras Hindu University, 221 005 Varanasi, India;(2) Department of Electronics Engineering, Institute of Technology, Banaras Hindu University, 221 005 Varanasi, India |
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| Abstract: | The effect of signal-modulated optical radiation on the characteristics of a GaAlAs/GaAs MODFET has been studied analytically. It is found that the offset voltage increases with modulation frequency and the effect of frequency is negligible above 5 MHz. The drain-source current decreases with increase in signal frequency at a constant radiation flux density, doping concentration and drain-source voltage. Studies on sheet concentration and transconductance also show that the signal frequency has a significant effect upto a certain modulation frequency ( 5 MHz) above which the effect of frequency is insignificant. |
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| Keywords: | 72.40 85.30 85.60 |
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