Computer simulation of proton channelling in silicon |
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Authors: | NK Deepak K Rajasekharan K Neelakandan |
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Institution: | (1) Department of Physics, University of Calicut, 673 635 Malappuram, India;(2) Department of Physics, Malabar Christian College, 673 001 Kozhikode, India |
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Abstract: | The channelling of 3 MeV protons in the 〈110〉 direction of silicon has been simulated using Vineyard model taking into account
thermally vibrating nuclei and energy loss due to ion-electron interactions. A beam made up of constant energy particles but
with spatial divergence has been simulated for the purpose. The values of the minimum scattering yield and half width of the
channelling dip are shown to be depth sensitive and agree well with the measured values. The dependence of yield on the angle
of incidence has been found to give information of all three types of channelling. The critical angles for the three types
of channelling and wavelength of planar oscillations are consistent with the previous calculations. |
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Keywords: | Channelling close collision yield half-angle minimum yield |
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