Analytical Simulation of an InAsSb Photovoltaic Detector for Mid-Infrared Applications |
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Authors: | P Chakrabarti P K Saxena and R K Lal |
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Institution: | (1) Centre for Research in Microelectronics, Department of Electronics Engineering, Institute of Technology, Banaras Hindu University, Varanasi, 221005, India;(2) Department of Electronics and Communication Engineering, Birla Institute of Technology, MESRA, Ranchi, India |
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Abstract: | A generic model of a mid-infrared photodetector based on a narrow bandgap semiconductor has been developed. The model has
been applied for analysis and simulation of an InAs0.89Sb0.11 photovoltaic detector for operation at room temperature in 2–5 μm wavelength region. The model takes into account the effect
of tunneling and other components of dark current on the detectivity of the device by considering all the three dominant recombination
mechanisms e.g., radiative, Shockley-Read-Hall and Auger recombination. The study revealed that the dark current of the photodetector
under reverse bias is dominated by trap-assisted tunneling component of current and this causes the detectivity of the device
to decrease at high reverse bias. It is further concluded that by operating the device at a suitable low reverse bias it is
possible to improve the room-temperature detectivity significantly as compared to its value at zero bias. |
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Keywords: | Detectivity GaSb/InAsSb Mid-infrared(MIR) Photodetector Trap-assisted tunneling (TAT) Band-to-band (BTB) tunneling Resistance area product |
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