Inelastic scattering of hot electrons in n-GaAs/AlAs types I and II multiple quantum wells doped with silicon

We have studied the dependence of hot electron scattering rate on temperature in n-GaAs/AlAs types I and II multiple quantum wells. For a sample with well width 37 Å, which is on the borderline between types I and II band alignment, the increase of the temperature in the range 6–80 K leads to the strong decrease of the hot electron scattering rate. We explain this result by ionization of donors and transfer of cold electrons from the Γ-valley of GaAs to the X-valley of AlAs.