Fano resonances in semiconductor superlattices |
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Authors: | T. W. Canzler, C. P. Holfeld, F. L ser, V. G. Lyssenko, K. Leo, D. M. Whittaker,K. K hler |
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Affiliation: | a Institut für Angewandte Photophysik, Technische Universität Dresden, 01062 Dresden, Germany;b Toshiba Research Europe Ltd., 260 Cambridge Science Park, Milton Road, Cambridge CB4 4WE, UK;c Fraunhofer-Institut für Angewandte Festkörperphysik, 79108 Freiburg, Germany |
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Abstract: | We use semiconductor superlattices as a model system for the investigation of Fano resonances. In absorption the excitonic transitions of the Wannier–Stark ladder show the typical asymmetric line shape due to coupling to the continuum of lower-lying transitions. The unique feature of these Fano resonances is that they allow to continuously tune the key parameter – the coupling strength Γ between the discrete state and the degenerate continuum – by varying the bias voltage. Using this feature, we directly show that the Fano coupling leads to a fast polarization decay. We also investigate the dependence of the Fano parameters on the structure of the superlattice and compare with an extensive theoretical model of the resonances. |
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Keywords: | Fano resonance Superlattices Polarisation decay |
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