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Vertical magneto-tunneling through a quantum dot and the density of states of small electronic systems
Authors:Augusto Gonzalez  Roberto Capote  
Institution:a Departamento de Fisica, Universidad de Antioquia, AA 1226, Medellin, Colombia;b Instituto de Cibernetica, Matematica y Fisica Calle E 309, Vedado, Habana 4, Cuba;c Centro de Estudios Aplicados al Desarrollo Nuclear, Calle 30 No 502, Miramar, La Habana, Cuba
Abstract:One-electron tunneling through a quantum dot with a strong magnetic field in the direction of the current is studied. The linear magneto-conductance is computed for a model parabolic dot with seven electrons in the intermediate states and for different values of the magnetic field. It is shown that the dot density of states at low excitation energies can be extracted from a precise measurement of the conductance at the upper edge of the Coulomb blockade diamond. We parametrized the density of states with a single “temperature” parameter (in the so called “constant temperature approximation”), and found that this parameter depends very weakly on the magnetic field.
Keywords:Single-electron tunneling  Density of levels  Quantum dots  High magnetic fields
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