Crystal lattice defects and Hall mobility of electrons in Si: Er/Si layers grown by sublimation molecular-beam epitaxy |
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| Authors: | V P Kuznetsov R A Rubtsova V N Shabanov A P Kasatkin S V Sedova G A Maksimov Z F Krasil’nik E V Demidov |
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| Institution: | (1) Research Physicotechnical Institute, Nizhni Novgorod State University, pr. Gagarina 23/5, Nizhni Novgorod, 603950, Russia;(2) Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhni Novgorod, 603950, Russia |
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| Abstract: | The density of crystal lattice defects in Si: Er layers grown through sublimation molecular-beam epitaxy at temperatures ranging from 520 to 580°C is investigated by a metallographic method, and the Hall mobility of electrons in these layers is determined. It is found that the introduction of erbium at a concentration of up to ～5 × 1018 cm?3 into silicon layers is not accompanied by an increase in the density of crystal lattice defects but leads to a considerable decrease in the electron mobility. |
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