Barrier and semiconducting properties of thin anodic films on chromium in an acid solution |
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Authors: | Željka Petrović Nushe Lajçi Mirjana Metikoš-Huković Ranko Babić |
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Institution: | (1) Department of Electrochemistry, Faculty of Chemical Engineering and Technology, University of Zagreb, PO Box 177, 10000 Zagreb, Croatia;(2) Faculty of Mines and Metallurgy, University of Prishtina, MIP Trepca, 40000 Mitrovica, Republic of Kosova; |
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Abstract: | The study of barrier and semiconducting properties of anodically formed oxide films on chromium in an acid solution was carried
out using the Cr-quartz crystal electrode. The oxide film formation and growth occur through an anion vacancies transport
via a low-field-assisted mechanism (H = 106 V cm−1). The anion diffusion coefficient, which quantitatively describes the transport of point defects within the growing film,
was calculated from capacitance data using the Nernst-Planck equation for low-field limit approximation and Mott-Schottky
analysis. The depletion region in the passive film, close to the film|electrolyte interface, dominates the semiconducting
properties. The passive film on Cr in an acid solution behaves as an n-type semiconductor. An energy-band structure model
of the passive film is given. |
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