Silicon dioxide modification by an electron beam

The overheating temperature of a microvolume of silicon dioxide produced by bombardment by a high specific-power electron beam has been estimated. Calculations showed that the maximum temperature to which a microvolume of silicon dioxide is overheated can be as high as 1200°C for an electron beam current of 100 nA. The variation in the cathodoluminescence characteristics of amorphous silica with different contents of hydroxyl groups was studied for various electron beam specific-power levels. The impact of a high specific-power electron beam was shown to create additional lattice defects up to the formation of silicon clusters.