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Magnetization reversal of sub-micron ferromagnetic tunnel junctions in external magnetic fields |
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| Authors: | U. K. Klostermann, R. Kinder, G. Bayreuther, M. Rü hrig, G. Rupp,J. Wecker |
| Affiliation: | a Institut für Experimentelle und Angewandte Physik, Universität Regensburg, D-93040 Regensburg, Germany b Siemens AG, CT MM 1, Paul-Gossen Strasse 100, D-91052 Erlangen, Germany |
| Abstract: | Sub-micron sized magnetic tunnel junctions are fabricated by electron beam lithography. Magnetoresistance measurements were done at crossed easy- and hard-axis fields and the critical switching curves for 3 different sub-μm junctions are discussed. Single domain like switching according to the Stoner and Wohlfarth model can be achieved, but Néel coupling effects and AAF stray field effects have to be controlled. |
| Keywords: | Stoner–Wohlfarth Single-domain Sub-micrometer Magnetic tunnel junction MRAM |
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