Electrical resistance and 1/f fluctuations in thin titanium films |
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Authors: | O. V. Gerashchenko V. A. Matveev N. K. Pleshanov V. Yu. Bairamukov |
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Affiliation: | 1. Konstantinov Petersburg Nuclear Physics Institute, National Research Centre “Kurchatov Institute,”, Orlova Roshcha, Gatchina, Leningrad oblast, 188300, Russia
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Abstract: | The thickness of a metallic layer has been determined and the resistivity and spectral density of voltage fluctuations in thin titanium films with initial thicknesses of 5–100 nm, which were obtained by magnetron sputtering and intended for promising elements of the neutron optics, have been investigated. It has been found that a continuous metallic layer necessary for functioning is retained even in thinnest samples, and excess fluctuations of the layer resistance with the 1/f-type spectrum are observed. It has been shown that the method of measuring film resistivity can be used as effective express-method of determining the thickness of metallic nanolayers. |
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