Preparation and Characteristics of Porous Silica Films by a Modified Base-Catalyzed Sol-Gel Process Containing PVA: II. Film Preparation |
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| Authors: | Y. Liu H. Chen L. Zhang X. Yao |
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| Affiliation: | (1) EMRL, Xi'an Jiaotong University, Xi'an, Shaanxi, 710049, People's Republic of China;;(2) State Key Laboratory of Mechanical Behavior, Xi'an Jiaotong University, Xi'an, 710049, People's Republic of China;(3) Functional Materials Research Laboratory, Tongji University, Shanghai, 200092, People's Republic of China;(4) Research School of Chemistry, Australian National University, Canberra, ACT, 0200, Australia |
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| Abstract: | ![]()
Porous SiO2 films were successfully deposited on silicon substrates by a modified base-catalyzed Sol-Gel process (MBCP) containing polyvinyl alcohol (PVA). The process conditions, such as the gelation time, the synthesis temperature, the stabilizing agent of the precursor solution and the spin coating speed, the heat-treatment, the annealing temperature of the film on the microstructure and porosity of porous SiO2 films were systematically investigated by SEM, XRD and ellipsometry techniques. This study provides a novel preparation technique for the porous SiO2 film. Using this process, the resultant film can reach a thickness of 3.6  m for one layer, a porosity of 25–50%, a low thermal conductivity of 0.11 W/m·K. This film will be used as a low dielectric layer, an thermal-insulating layer and a low refractive index layer. |
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| Keywords: | porous film SiO2 sol-gel thickness thermal conductivity |
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