| Structure Stability of LaAlO3 Thin Films on Si Substrates |
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| 引用本文： | HE Meng,LIU Guo-Zhen,XIANG Wen-Feng,Lü Hui-Bin,JIN Kui-Juan,ZHOU Yue-Liang,YANG Guo-Zhen. Structure Stability of LaAlO3 Thin Films on Si Substrates[J]. 中国物理快报, 2007, 24(9): 2671-2674 |
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| 作者姓名： | HE Meng LIU Guo-Zhen XIANG Wen-Feng Lü Hui-Bin JIN Kui-Juan ZHOU Yue-Liang YANG Guo-Zhen |
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| 作者单位： | Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080 |
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| 基金项目： | Supported by the National Natural Science Foundation of China under Grant Nos 10334070 and 60576015, and the National Basic Research Programme of China under Grant No 2004CB619004. |
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| 摘 要： | A series of amorphous and single-crystalline LaAlO3 （LAO） thin films are fabricated by laser molecular-beam epitaxy technique on Si substrates under various conditions of deposition. The structure stability of the LAO films annealed in high temperature and various ambients is studied by x-ray diffraction as well as high-resolution transmission electron microscopy. The results show that the epitaxial LAO films have very good stability, and the structures of amorphous LAO thin films depend strongly on the conditions of deposition and post-annealing. The results reveal that the formation of LAO composition during the deposition is very important for the structure stability of LAO thin films.
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| 关 键 词： | LaAlO3 稳定性 硅元素 薄膜 |
| 收稿时间： | 2007-04-17 |
| 修稿时间： | 2007-04-17 |
Structure Stability of LaAlO3 Thin Films on Si Substrates |
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| HE Meng, LIU Guo-Zhen, XIANG Wen-Feng, LU Hui-Bin, JIN Kui-Juan, ZHOU Yue-Liang, YANG Guo-Zhen. Structure Stability of LaAlO3 Thin Films on Si Substrates[J]. Chinese Physics Letters, 2007, 24(9): 2671-2674 |
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| Authors: | HE Meng LIU Guo-Zhen XIANG Wen-Feng LU Hui-Bin JIN Kui-Juan ZHOU Yue-Liang YANG Guo-Zhen |
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| Affiliation: | Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences Beijing 100080 |
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| Abstract: | A series of amorphous and single-crystalline LaAlO3 (LAO) thin films are fabricated by laser molecular-beam epitaxy technique on Si substrates under various conditions of deposition. The structure stability of the LAO films annealed in high temperature and various ambients is studied by x-ray diffraction as well as high-resolution transmission electron microscopy. The results show that the epitaxial LAO films have very good stability, and the structures of amorphous LAO thin films depend strongly on the conditions of deposition and post-annealing. The results reveal that the formation of LAOcomposition during the deposition is very important for the structure stability of LAO thin films. |
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| Keywords: | 77.55.+f 68.60.Dv 61.10.Nz |
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