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Controlled Growth of Zn-Polar ZnO Films on Al-Terminated α-Al2O3(0001) Surface by Using Wurtzite MgO Buffer
引用本文:袁江涛,刘玉资,王喜娜,李含冬,王勇,曾兆权,梅增霞,杜小龙,贾金锋,薛其坤,张泽.Controlled Growth of Zn-Polar ZnO Films on Al-Terminated α-Al2O3(0001) Surface by Using Wurtzite MgO Buffer[J].中国物理快报,2007,24(8):2408-2411.
作者姓名:袁江涛  刘玉资  王喜娜  李含冬  王勇  曾兆权  梅增霞  杜小龙  贾金锋  薛其坤  张泽
作者单位:[1]Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080 [2]Department of Physics, Tsinghua University, Beijing 100084 [3]Beijing University of Technology, Beijing 100022
基金项目:Supported by the National Natural Science Foundation of China under Grant No 60606023 and 50532090, the National Basic Research Programme of China under Grant No 2002CB613502, and Chinese Academy of Sciences.
摘    要:The controlled growth of Zn-polar ZnO fihns on Al-terminated α-Al203 (0001) substrates is investigated by the radio-frequency plasma-assisted molecular beam epitaxy method. Prior to the growth, α-Al2O3 (0001) surface is modified by an ultrathin MgO layer, which serves as a uniform template for epitaxy of Zn-polar ZnO films. The microstructures of ZnO/MgO/Al2O3 interface are investigated by in-situ reflection high-energy electron diffraction observations and ex-situ high-resolution transmission electron microscopy characterization. It is found that under Mg-rich condition, the achievement of the wurtzite MgO ultrathin layer plays a key role in the subsequent growth of Zn-polar ZnO. An interracial atomic model is proposed to explain the mechanism of polarity selection of both MgO and ZnO films.

关 键 词:氧化锌  薄膜  表面特征  纤维锌矿
收稿时间:2007-5-10
修稿时间:2007-03-10
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