Optical imaging of electrical carrier injection into individual InAs quantum dots |
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Authors: | Baumgartner A Stock E Patanè A Eaves L Henini M Bimberg D |
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Institution: | School of Physics and Astronomy, University of Nottingham, Nottingham NG7 2RD, United Kingdom. andreas.baumgartner@unibas.ch |
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Abstract: | We image the micro-electroluminescence (EL) spectra of self-assembled InAs quantum dots (QDs) embedded in the intrinsic region of a GaAs p-i-n diode and demonstrate optical detection of carrier injection into a single QD. Tunneling of electrons and holes into the QDs at bias voltages below the flat-band condition leads to a spectrum of sharp EL lines from a small number of bright spots on the diode surface, characteristic of emission from individual QDs. We explain this behavior in terms of Coulomb interaction effects and the selective excitation of a small number of QDs within the ensemble due to preferential tunneling paths for carriers. |
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