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Analysis of ALD-processed thin films by ion-beam techniques |
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| Authors: | Matti?Putkonen Timo?Sajavaara |
| Institution: | (1) Laboratory of Inorganic and Analytical Chemistry, Helsinki University of Technology, P.O. Box 6100, 02015 Espoo, Finland;(2) Physics Department, University of Jyväskylä, P.O. Box 35, 40014 Jyväskylä, Finland;(3) Accelerator Laboratory, University of Helsinki, P.O. Box 43, 00014 Helsinki, Finland |
| Abstract: | This review introduces the possibilities of ion-beam techniques for the analysis of thin films and thin-film structures processed by atomic layer deposition (ALD). The characteristic features of ALD are also presented. The analytical techniques discussed include RBS, NRA and ERDA with its variants, viz. the TOF-ERDA and HI-ERDA. The thin film examples are taken from flat-panel display technology (TFEL structures) and the semiconductor industry (high-k insulators).Dedicated to the memory of Wilhelm Fresenius |
| Keywords: | Ion-beam techniques Atomic layer deposition Thin films Electroluminescent displays High-k insulators |
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