Microstructural study of thin films of 5 mol% gadolinia-doped ceria prepared by pulsed laser ablation |
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Authors: | S. Selladurai K. Muthukkumaran P. Kuppusami R. Divakar E. Mohandas V. S. Raghunathan |
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Affiliation: | (1) Materials Characterization Group, Indira Gandhi Centre for Atomic Research, Kalpakkam, 603 102, India;(2) Department of Physics, Anna University, Chennai, 600 025, India |
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Abstract: | Microstructural characterization of thin films of 5 mol% gadolinia-doped ceria films deposited by pulsed laser ablation in the energy range 100–600 mJ/pulse has been investigated. As-deposited films were found to be nanocrystalline with preferred orientation. X-ray diffraction (XRD) analysis revealed that the size of the nanocrystals of doped ceria does not vary significantly with increasing laser energy, while transmission electron microscopy (TEM) study showed a uniform distribution of nanocrystals of 8–10 nm for energies ≤200 mJ/pulse and nanocrystals embedded in a large crystalline matrix of doped ceria for energies in the range 400–600 mJ/pulse. Though, the laser-ablated films were totally free from secondary phases, lattice imaging of the large grained doped ceria showed growth-induced defects such as dislocations and ledges. This artice was accidentally published twice. This is the second publication, please cite only the authoritative first one which is available at . An additional erratum is available at . An erratum to this article can be found at |
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Keywords: | Microstructure Doped ceria Laser ablation |
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