1.Rzhanov Institute of Semiconductor Physics, Siberian Branch,Russian Academy of Sciences,Novosibirsk,Russia
Abstract:
The dependence of elastic energy on relaxation parameters ρx and ρy varying in limits from 0 to 1 is analyzed for near-surface layers of an In0.1Ga0.9As epitaxial film on a GaAs (001) substrate whose thickness exceeds the distance between neighboring misfit dislocations.