Impedance spectroscopy analysis of AlGaN/GaN HFET structures |
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Authors: | B Paszkiewicz |
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Institution: | Institute of Microsystems Technology, Wroclaw University of Technology, Janiszewskiego 11/17, 50-372 Wroclaw, Poland |
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Abstract: | For HFET application a series of samples with 30 nm AlxGa1−xN (x=0.02–0.4) layers deposited at 1040°C onto optimised 2 μm thick undoped GaN buffers were fabricated. The AlxGa1−xN/GaN heterostructures were grown on c-plane sapphire in an atmospheric pressure, single wafer, vertical flow MOVPE system. Electrical properties of the AlxGa1−xN/GaN heterostructures and thick undoped GaN layers were evaluated by impedance spectroscopy method performed in the range of 80 Hz–10 MHz with an HP 4192A impedance meter using a mercury probe. The carrier concentration distribution through the layer thickness and the sheet carrier concentration were evaluated. A non-destructive, characterisation technique for verification of device heterostucture quality from the measured C–V and G–V versus frequency characteristics of the heterostructure is proposed. |
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Keywords: | A1 Characterization A3 Metalogranic vapor phase epitaxy B1 Nitrides B3 Field effect transistors |
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