离子注入n型GaN光致发光谱中宽黄光发射带研究

利用离子注入方法和光致发光技术系统研究了注入离子对n型GaN宽黄光发射带的影响.实验采用的注入离子为：N，O，Mg，Si和Ga，剂量分别为10¹³，10¹⁴，10¹⁵和10¹⁶/cm²，注入温度为室温.注入后的样品在900 ℃流动氮气环境下进行热退火，退火时间为10 min，并对退火前后的样品分别进行室温光致发光测量.通过实验数据的分析，独立提出了提取注入离子对晶体黄光发光特性影响的半经验模型.利用该模型导出的公式，可以确定注入的N，O，Ga，Mg和Si离子对黄光发射带的影响随注入剂量的变化关系以及该影响的相对强弱.关键词：氮化镓光致发光谱离子注入

Broadband yellow luminescence in the photoluminescence spectra of n-GaN implanted by the different ions

The n-type gallium nitride (GaN) films were implanted with oxygen, nitrogen, magnesium, silicon and gallium ions at room temperature in the dose range from 10¹³ to 10¹⁶ cm^-2. All implanted samples were annealed at 900℃ for 10 min in a flowing nitrogen environment. The effects of the implantation ions on the broad yellow luminescence (YL) band were systematically investigated using the photoluminescence (PL) spectra taken at room temperature. A formula based on a semi-empirical model which was proposed by us was deduced, and with it, the experimental data was analyzed and the influence of implanted ions on the intensity of YL band was determined. We can confirm that the effects of the Mg (10¹⁶/cm²), Si (≤10¹⁴/cm²) and Ga(≥10¹⁵/cm²) implanted ions on the YL band are larger than that of the N and O implanted ions.